Mosys Inc Shanghai Design Center
Senior Digital IC Design/Verification Engineer
职位信息：
Mosys Inc Shanghai Design Center 公司行业： 学术/科研 电子技术/半导体 公司类型： 外商独资 公司规模： 20-99人 职位类别：计算机软、硬件/互联网/IT 电子/半导体/仪表仪器 工作地点：上海 发布日期：2007-07-24 申请职位 工作经验：3-5年 最低学历：本科 职位月薪：面议 工作性质：全职 招聘人数：10人 管理经验：否 职位描述/要求： Location : Shanghai
Short Description :
Digital IC Design and verification
Key Responsibilities :

• System Level Digital IC Design;
  
• Devise system verification solution
  
• Develop product specs and design specs
  
• Design simulation/verification environment
  
• Perform IC module Design, System Simulation, and FPGA Verification
  
• Help Layout, Co-operating with Layout
  
• Perform circuit optimization and debug
  

Skill set :

• MSEE or higher, over 3 years IC design Background;
  
• Good skills in Xilinx, Altera, Synopsys, and Cadence EDA software
  
• Experienced in system design, or IC/FPGA design/verification;
  
• Strong background in Communication or PC field.
  
• Experience in protocol on TCP/IP, PCI-Express, SATA is preferred
  
• Good communication skills
  

Mind set :

• Team worker
  
• Quality minded
  
• Self motivator
  
• Kind and friendly personality
  
• Curious about new techniques, technologies and tools
  
• Fast learner
  
• Creative & innovative
  

联系方式： Only applications that meet the criteria detailed above will be reviewed.Please e-mail to hr_shanghai@atmel.com a detailed Curriculum Vita with your contact number, current and expected salaries.We regret that only short-listed candidates will be notified

• Telephone inquiry or personal visit will not be received.
  
• Please indicate the position you are applying for.
  
• Please indicate which city your 'hukou' is valid for.
  
• Please send your resume only in plain text.
  
• Please write/paste all words in body of email, DO NOT attach any files.
• Please indicate that you are responding to Zhaopin.com!

公司信息：
Mosys Inc Shanghai Design Center Mosys Inc Shanghai Design Center Founded in 1991, MoSys (Nasdaq: MOSY), develops, licenses and markets industry-leading embedded memory IP for semiconductors. MoSys patented 1T- SRAM(R) and 1T-FLASH(TM) technologies offer a combination of high density, low power consumption, high speed and low cost that is unmatched by other memory technologies. MoSys licensees have shipped more than 110 million chips incorporating 1T-SRAM, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available at http://www.mosys.com. MoSys Extends Technology Offering Beyond Leading 1T-SRAM Memory IP to Include Mixed Signal Technology Aimed at High Definition DVD, and high-speed serial interfaces for use in a range of communications markets. The ShangShai Design Center which Mosys acquired recently will continue on the network storage product development, to strengthen the design capacity, we are seeking talent on the following positions.